BSS84V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Factory Lead Time :

19 Weeks

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Resistance :

10Ohm

Power Dissipation :

150mW

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Length :

1.6mm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Weight :

3.005049mg

Gate to Source Voltage (Vgs) :

15V

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

10 ns

Terminal Form :

Flat

Contact Plating :

Tin

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-50V

Max Power Dissipation :

150mW

Width :

1.2mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Drain to Source Voltage (Vdss) :

50V

Lead Free :

Lead Free

Radiation Hardening :

No

Height :

600μm

Number of Pins :

6

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2V @ 1mA

Turn-Off Delay Time :

18 ns

Drain Current-Max (Abs) (ID) :

0.13A

ECCN Code :

EAR99

Published :

2013

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

130mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate