BSS84

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Mfr.Part #
BSS84
Manufacturer
YANGJIE
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
SOT-23 P -60V -0.17A Transistor
Stock
2,269
In Stock :
2,269

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Manufacturer :
YANGJIE
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
P-Channel
Drain to Source Resistance :
10Ohm
Gate to Source Voltage (Vgs) :
20V
Height :
930μm
Supplier Device Package :
SOT-23-3
Fall Time (Typ) :
6.3 ns
Number of Pins :
3
Voltage - Rated DC :
-50V
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Number of Elements :
1
Drain to Source Breakdown Voltage :
-50V
Max Operating Temperature :
150°C
Contact Plating :
Tin
Input Capacitance (Ciss) (Max) @ Vds :
73pF @ 25V
Continuous Drain Current (ID) :
130mA
Current Rating :
-130mA
Dual Supply Voltage :
-50V
Turn-Off Delay Time :
10 ns
Length :
2.92mm
Voltage :
50V
Min Operating Temperature :
-55°C
Width :
3.05mm
Drain to Source Voltage (Vdss) :
50V
Vgs(th) (Max) @ Id :
2V @ 1mA
REACH SVHC :
No SVHC
Current :
13A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power Dissipation-Max :
360mW Ta
Factory Lead Time :
8 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
5V
Nominal Vgs :
-1.7 V
Threshold Voltage :
-1.7V
Resistance :
10Ohm
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Rds On Max :
10 Ω
Vgs (Max) :
±20V
Rise Time :
6.3ns
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
10Ohm @ 100mA, 5V
Power Dissipation :
360mW
Published :
2013
Current - Continuous Drain (Id) @ 25°C :
130mA Ta
Package / Case :
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs :
1.3nC @ 5V
Input Capacitance :
73pF
Turn On Delay Time :
2.5 ns
Mount :
Surface Mount
Termination :
SMD/SMT
Datasheets
BSS84
Introducing Transistors - FETs, MOSFETs - Single YANGJIE BSS84 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Voltage:50V, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, BSS84 pinout, BSS84 datasheet PDF, BSS84 amp .Beyond Transistors - FETs, MOSFETs - Single YANGJIE BSS84 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3

BSS84 Description

This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

 

 

BSS84 Features

-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V 

Voltage-Controlled P-Channel Small-Signal Switch 

High-Density Cell Design for Low RDS(ON) 

High Saturation Current


 

BSS84 Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.



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