BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 P -60V -0.17A Transistor
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Drain to Source Resistance :
- 10Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 930μm
- Supplier Device Package :
- SOT-23-3
- Fall Time (Typ) :
- 6.3 ns
- Number of Pins :
- 3
- Voltage - Rated DC :
- -50V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -50V
- Max Operating Temperature :
- 150°C
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Continuous Drain Current (ID) :
- 130mA
- Current Rating :
- -130mA
- Dual Supply Voltage :
- -50V
- Turn-Off Delay Time :
- 10 ns
- Length :
- 2.92mm
- Voltage :
- 50V
- Min Operating Temperature :
- -55°C
- Width :
- 3.05mm
- Drain to Source Voltage (Vdss) :
- 50V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- REACH SVHC :
- No SVHC
- Current :
- 13A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 360mW Ta
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Nominal Vgs :
- -1.7 V
- Threshold Voltage :
- -1.7V
- Resistance :
- 10Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 10 Ω
- Vgs (Max) :
- ±20V
- Rise Time :
- 6.3ns
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Power Dissipation :
- 360mW
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Input Capacitance :
- 73pF
- Turn On Delay Time :
- 2.5 ns
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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