BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 P -60V -0.17A Transistor
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 130mA
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Length :
- 2.92mm
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 360mW Ta
- Nominal Vgs :
- -1.7 V
- Termination :
- SMD/SMT
- Voltage - Rated DC :
- -50V
- Resistance :
- 10Ohm
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -50V
- Current :
- 13A
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Current Rating :
- -130mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 10Ohm
- Drain to Source Voltage (Vdss) :
- 50V
- FET Type :
- P-Channel
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- -1.7V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 930μm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 73pF
- Fall Time (Typ) :
- 6.3 ns
- Turn On Delay Time :
- 2.5 ns
- Mounting Type :
- Surface Mount
- Rise Time :
- 6.3ns
- Published :
- 2013
- Voltage :
- 50V
- Min Operating Temperature :
- -55°C
- Contact Plating :
- Tin
- Width :
- 3.05mm
- Power Dissipation :
- 360mW
- Supplier Device Package :
- SOT-23-3
- Rds On Max :
- 10 Ω
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Turn-Off Delay Time :
- 10 ns
- Number of Elements :
- 1
- Dual Supply Voltage :
- -50V
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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