BSS83,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-30 Code :

R-PDSO-G4

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Voltage - Rated :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1997

Number of Elements :

1

Operating Temperature (Max) :

125°C

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Type :

N-Channel

HTS Code :

8541.21.00.95

Drain-source On Resistance-Max :

120Ohm

Package / Case :

TO-253-4, TO-253AA

Current Rating (Amps) :

50mA

Power Dissipation-Max (Abs) :

0.23W

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

10V

Case Connection :

SUBSTRATE

Pin Count :

4

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.05A

Number of Terminations :

4

Surface Mount :

yes

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99