BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET SOT-23 P Channel 50V
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- MDD
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -50V
- Supplier Device Package :
- SOT-23-3
- Rise Time :
- 6.3ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Threshold Voltage :
- -1.7V
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -50V
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Mounting Type :
- Surface Mount
- Current :
- 13A
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 360mW Ta
- Current Rating :
- -130mA
- Number of Pins :
- 3
- Dual Supply Voltage :
- -50V
- Termination :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 50V
- Element Configuration :
- Single
- Turn On Delay Time :
- 2.5 ns
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Nominal Vgs :
- -1.7 V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Power Dissipation :
- 360mW
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 6.3 ns
- Lead Free :
- Lead Free
- Resistance :
- 10Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 10 ns
- Rds On Max :
- 10 Ω
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Height :
- 930μm
- Voltage :
- 50V
- Max Operating Temperature :
- 150°C
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 10Ohm
- Width :
- 3.05mm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 73pF
- Continuous Drain Current (ID) :
- 130mA
- Datasheets
- BSS84
BSS84 Documents

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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