BSS83PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

-60V

Current - Continuous Drain (Id) @ 25°C :

330mA Ta

Pbfree Code :

yes

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

3Ohm

Threshold Voltage :

-1.5V

Length :

2.9mm

Turn-Off Delay Time :

56 ns

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 80μA

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Pin Count :

3

Drain to Source Breakdown Voltage :

-60V

Width :

1.3mm

Gate Charge (Qg) (Max) @ Vgs :

3.57nC @ 10V

Power Dissipation :

360mW

Number of Pins :

3

Power Dissipation-Max :

360mW Ta

Series :

SIPMOS®

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

10 Weeks

Number of Elements :

1

Terminal Position :

Dual

Rise Time :

71ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

Published :

1999

Mount :

Surface Mount

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Fall Time (Typ) :

61 ns

Feedback Cap-Max (Crss) :

9 pF

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

2 Ω @ 330mA, 10V

Element Configuration :

Single

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

23 ns

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

-330mA

Manufacturer Package Identifier :

PG-SOT23-3-5