BSS83PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Width :

1.3mm

Element Configuration :

Single

Power Dissipation-Max :

360mW Ta

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

3.57nC @ 10V

Pin Count :

3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-60V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Max Dual Supply Voltage :

-60V

Rds On (Max) @ Id, Vgs :

2 Ω @ 330mA, 10V

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

Turn On Delay Time :

23 ns

Published :

1999

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Series :

SIPMOS®

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

-330mA

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Mounting Type :

Surface Mount

Manufacturer Package Identifier :

PG-SOT23-3-5

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

360mW

Rise Time :

71ns

Current - Continuous Drain (Id) @ 25°C :

330mA Ta

Terminal Position :

Dual

Turn-Off Delay Time :

56 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 80μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

2.9mm

Drain-source On Resistance-Max :

3Ohm

Contact Plating :

Tin

JESD-609 Code :

e3

ECCN Code :

EAR99

Height :

1.1mm

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

61 ns

Feedback Cap-Max (Crss) :

9 pF

Threshold Voltage :

-1.5V

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No