BSS84DW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Threshold Voltage :

-1.6V

Turn On Delay Time :

10 ns

Current Rating :

-130mA

Voltage - Rated DC :

-50V

Min Breakdown Voltage :

50V

Factory Lead Time :

15 Weeks

Dual Supply Voltage :

-50V

Turn-Off Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Resistance :

10Ohm

Length :

2.2mm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 1mA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

50V

Contact Plating :

Tin

Pin Count :

6

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Base Part Number :

BSS84DW

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-50V

Width :

1.35mm

Drain Current-Max (Abs) (ID) :

0.13A

Mount :

Surface Mount

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Number of Pins :

6

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

130mA

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Element Configuration :

Dual

Height :

1mm

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Nominal Vgs :

-1.6 V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Termination :

SMD/SMT

Number of Terminations :

6

Weight :

6.010099mg

Number of Channels :

2

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V