BSS84AKW,115
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- Mfr.Part #
- BSS84AKW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BSS84AKW - SMALL SI
- Stock
- 583,103
- In Stock ：
- 583,103
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 50V
- Pin Count :
- 3
- Power Dissipation-Max :
- 260mW Ta 830mW Tc
- Turn On Delay Time :
- 13 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 100mA, 10V
- Turn-Off Delay Time :
- 48 ns
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 11ns
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -50V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 36pF @ 25V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Package / Case :
- SC-70, SOT-323
- Resistance :
- 7.5Ohm
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 150mA
- Published :
- 2011
- Number of Terminations :
- 3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 0.35nC @ 5V
- Number of Pins :
- 3
- Max Dual Supply Voltage :
- -50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 260mW
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Fall Time (Typ) :
- 25 ns
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BSS84AKW,115
P-Channel Tape & Reel (TR) 7.5 Ω @ 100mA, 10V ±20V 36pF @ 25V 0.35nC @ 5V 50V SC-70, SOT-323
BSS84AKW,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 25V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=-50V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -50V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -50V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS84AKW,115 Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKW,115 Applications
There are a lot of Nexperia USA Inc.
BSS84AKW,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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