BSS84AKV,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Contact Plating :

Tin

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 5V

Pin Count :

6

FET Feature :

Logic Level Gate

Number of Pins :

6

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

-50V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 100mA, 10V

Max Dual Supply Voltage :

-50V

FET Type :

2 P-Channel (Dual)

Published :

2006

Terminal Form :

Flat

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Mounting Type :

Surface Mount

Number of Terminations :

6

Number of Elements :

2

Lead Free :

Lead Free

Turn-Off Delay Time :

48 ns

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

8.5Ohm

Transistor Element Material :

SILICON

Fall Time (Typ) :

25 ns

Rise Time :

11ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

50V

Drain Current-Max (Abs) (ID) :

0.17A

Power Dissipation :

330mW

Continuous Drain Current (ID) :

170mA

Max Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666