BSS225

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

45 Ω @ 90mA, 10V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

1W Ta

Drain Current-Max (Abs) (ID) :

0.09A

Number of Elements :

1

Series :

SIPMOS®

Terminal Position :

Single

Published :

2007

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-F3

ECCN Code :

EAR99

Number of Terminations :

3

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.3V @ 94µA

Pin Count :

3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Feedback Cap-Max (Crss) :

4.4 pF

Surface Mount :

yes

HTS Code :

8541.29.00.95

Package / Case :

TO-243AA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

131pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

90mA Ta

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±20V