BSS214NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

20V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

ECCN Code :

EAR99

Series :

OptiMOS™

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2011

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 5V

Qualification Status :

Not Qualified

Pin Count :

3

Continuous Drain Current (ID) :

1.5A

Power Dissipation-Max :

500mW Ta

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Rise Time :

7.8ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Power Dissipation :

500mW

Mount :

Surface Mount