BSS214NWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

950mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Fall Time (Typ) :

1.4 ns

Rise Time :

7.8ns

Width :

1.25mm

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Turn On Delay Time :

4.1 ns

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

Number of Terminations :

3

Package / Case :

SC-70, SOT-323

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Length :

2mm

Max Dual Supply Voltage :

20V

Number of Pins :

3

Height :

1mm

Power Dissipation :

500mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Element Configuration :

Single

Published :

2006

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Continuous Drain Current (ID) :

1.5A

Power Dissipation-Max :

500mW Ta

Vgs (Max) :

±12V

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

6.8 ns

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Pin Count :

3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Channels :

1

Number of Elements :

1

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 5V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Operating Mode :

ENHANCEMENT MODE