BSS215PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Pbfree Code :

yes

Terminal Form :

Gull wing

Power Dissipation-Max :

500mW Ta

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Published :

2011

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

346pF @ 15V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

FET Type :

P-Channel

Power Dissipation :

500mW

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

9.7ns

Gate to Source Voltage (Vgs) :

12V

Halogen Free :

Halogen Free

Qualification Status :

Not Qualified

Series :

OptiMOS™

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Max Dual Supply Voltage :

-20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Pins :

3

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

1.5A

Mount :

Surface Mount

Lead Free :

Lead Free