BSS215PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

500mW Ta

Continuous Drain Current (ID) :

1.5A

Rise Time :

9.7ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Published :

2011

Number of Elements :

1

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

346pF @ 15V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Lead Free :

Lead Free

Mount :

Surface Mount

Vgs (Max) :

±12V

Max Dual Supply Voltage :

-20V

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Halogen Free :

Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

10 Weeks

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.5A, 4.5V