BSS209PW

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.55Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.38nC @ 4.5V

Power Dissipation-Max :

520mW Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±12V

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

580mA Ta

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

550m Ω @ 580mA, 4.5V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

3

Drain Current-Max (Abs) (ID) :

0.58A

Input Capacitance (Ciss) (Max) @ Vds :

89.9pF @ 15V

HTS Code :

8541.21.00.95

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.2V @ 3.5μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

FET Type :

P-Channel

RoHS Status :

RoHS Compliant