BSP126,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Terminations :

4

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

375mA

DS Breakdown Voltage-Min :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

250V

Factory Lead Time :

4 Weeks

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

375mA Ta

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

15 pF

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Terminal Position :

Dual

Power Dissipation-Max :

1.5W Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

5Ohm

Rds On (Max) @ Id, Vgs :

5 Ω @ 300mA, 10V

Transistor Application :

SWITCHING

Power Dissipation :

1.5W

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Pins :

3

Terminal Finish :

Tin (Sn)