BSO150N03MDGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

7A

Base Part Number :

BSO150N03

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power - Max :

1.4W

Pbfree Code :

yes

Pin Count :

8

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

18 Weeks

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.015Ohm

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA