BSO130N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.013Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

13m Ω @ 11.1A, 10V

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Published :

2011

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Power Dissipation-Max :

1.56W Ta

Mount :

Surface Mount

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Terminal Form :

Gull wing

Number of Elements :

1

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)