BSO130N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Manufacturer :

Infineon Technologies AG

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

Series :

OptiMOS™ 3

Terminal Finish :

MATTE TIN

Supplier Device Package :

PG-DSO-8

Current - Continuous Drain (Id) @ 25°C :

9A (Ta)

Subcategory :

FET General Purpose Power

Power Dissipation (Max) :

1.56W (Ta)

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

9 A

Drain-source On Resistance-Max :

0.013 Ω

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

13mOhm @ 11.1A, 10V

DS Breakdown Voltage-Min :

30 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Pin Count :

8

Polarity/Channel Type :

N-Channel

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30 V

Number of Terminals :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 15 V

JESD-609 Code :

e3

Technology :

MOSFET (Metal Oxide)

Package :

Bulk

FET Feature :

-

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

2.5 W