BSO150N03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

21 ns

JEDEC-95 Code :

MS-012AA

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

2

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.015Ohm

Max Power Dissipation :

1.4W

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.1A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Rise Time :

4ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

ECCN Code :

EAR99

Current Rating :

9.1A

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 25μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Pins :

8

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

7.6A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Pin Count :

8

Feedback Cap-Max (Crss) :

100 pF

Fall Time (Typ) :

4 ns

Number of Terminations :

8

Base Part Number :

BSO150N03

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 15V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Power Dissipation :

1.4W

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Published :

2008