BSL215PL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2012

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Power - Max :

500mW

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

346pF @ 15V

Terminal Form :

Gull wing

FET Type :

2 P-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G6

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.5A, 4.5V

DS Breakdown Voltage-Min :

20V

Pin Count :

6

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1.5A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

1.5A

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

BSL215

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Feedback Cap-Max (Crss) :

128 pF

Drain-source On Resistance-Max :

0.15Ohm

Gate Charge (Qg) (Max) @ Vgs :

3.55nC @ 4.5V

ECCN Code :

EAR99