BSL215CL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.5A

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Number of Terminations :

6

Base Part Number :

BSL215

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

0.73nC @ 4.5V

Published :

2013

HTS Code :

8541.21.00.95

Mount :

Surface Mount

Radiation Hardening :

No

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

500mW

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.14Ohm

Number of Pins :

6

Series :

OptiMOS™

Pbfree Code :

yes

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

9 pF

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

FET Type :

N and P-Channel