BSD840NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

2mm

JESD-609 Code :

e3

Published :

2011

Number of Elements :

2

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.26nC @ 2.5V

Drain Current-Max (Abs) (ID) :

3.5A

Vgs(th) (Max) @ Id :

750mV @ 1.6μA

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

1.9 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.4Ohm

Turn-Off Delay Time :

7.8 ns

Transistor Element Material :

SILICON

Series :

OptiMOS™

Width :

1.25mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

400m Ω @ 880mA, 2.5V

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Height :

1mm

Number of Channels :

2

Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Pin Count :

6

ECCN Code :

EAR99

Number of Terminations :

6

Number of Pins :

6

Max Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

880mA

Halogen Free :

Halogen Free

Package / Case :

6-VSSOP, SC-88, SOT-363

Rise Time :

2.2ns

Lead Free :

Lead Free

Threshold Voltage :

550mV

Mounting Type :

Surface Mount

Base Part Number :

BSD840

Max Dual Supply Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE