BSD816SNH6327XTSA1
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- Mfr.Part #
- BSD816SNH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.4A SOT363-6
- Stock
- 52,852
- In Stock ：
- 52,852
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- Vgs (Max) :
- ±8V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Series :
- OptiMOS™
- Width :
- 1.25mm
- Height :
- 800μm
- Rise Time :
- 9ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 500mW Ta
- Vgs(th) (Max) @ Id :
- 0.95V @ 3.7μA
- FET Type :
- N-Channel
- Pbfree Code :
- No
- Turn-Off Delay Time :
- 11 ns
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 1.4A
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 2.5V
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.4A, 2.5V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- Max Dual Supply Voltage :
- 20V
- Gate to Source Voltage (Vgs) :
- 8V
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 0.6nC @ 2.5V
- Length :
- 2mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 10V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 5.3 ns
- Datasheets
- BSD816SNH6327XTSA1
N-Channel Tape & Reel (TR) 160m Ω @ 1.4A, 2.5V ±8V 180pF @ 10V 0.6nC @ 2.5V 6-VSSOP, SC-88, SOT-363
BSD816SNH6327XTSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 1.4A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In addition to 20V, it supports dual voltages up to the maximum.Using drive voltage (1.8V 2.5V), this device contributes to a reduction in overall power consumption.
BSD816SNH6327XTSA1 Features
a continuous drain current (ID) of 1.4A
the turn-off delay time is 11 ns
BSD816SNH6327XTSA1 Applications
There are a lot of Infineon Technologies
BSD816SNH6327XTSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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