BSD816SN L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.4A, 2.5V

Gate to Source Voltage (Vgs) :

8V

Max Dual Supply Voltage :

20V

Vgs (Max) :

±8V

Feedback Cap-Max (Crss) :

10 pF

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 2.5V

Number of Pins :

6

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

1.4A

Fall Time (Typ) :

2.2 ns

Turn-Off Delay Time :

11 ns

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

Published :

2013

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Package / Case :

6-VSSOP, SC-88, SOT-363

Power Dissipation-Max :

500mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Pbfree Code :

yes

Number of Terminations :

6

FET Type :

N-Channel

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

5.3 ns

Rise Time :

9ns

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

950mV @ 3.7μA