BLT81,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

yes

Terminal Position :

Dual

Number of Elements :

1

Frequency - Transition :

900MHz

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

9.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Additional Feature :

High Reliability

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Configuration :

Single

Gain :

8dB

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 300mA 5V

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

2W

Number of Terminations :

4

Collector-Base Capacitance-Max :

4pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

175°C TJ

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Power Dissipation Ambient-Max :

2W

Published :

1998

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Package / Case :

TO-261-4, TO-261AA

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Pin Count :

4

Terminal Finish :

Tin (Sn)

Base Part Number :

BLT81

HTS Code :

8541.29.00.75

Power - Max :

2W

Packaging :

Tape and Reel (TR)