BLT81,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

TO-261-4, TO-261AA

Gain :

8dB

Terminal Position :

Dual

Operating Temperature :

175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.75

Power - Max :

2W

Published :

1998

Current - Collector (Ic) (Max) :

500mA

Collector-Base Capacitance-Max :

4pF

Power Dissipation-Max (Abs) :

2W

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

9.5V

JESD-609 Code :

e3

Configuration :

Single

Additional Feature :

High Reliability

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Pin Count :

4

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BLT81

Power Dissipation Ambient-Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Case Connection :

COLLECTOR

Factory Lead Time :

16 Weeks

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 300mA 5V

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

900MHz

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99