BLT50,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Published :

1998

Power Dissipation Ambient-Max :

2W

Collector-Base Capacitance-Max :

6pF

HTS Code :

8541.29.00.75

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Case Connection :

COLLECTOR

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BLT50

Configuration :

Single

Qualification Status :

Not Qualified

Number of Elements :

1

Power Gain-Min (Gp) :

10dB

ECCN Code :

EAR99

Operating Temperature :

175°C TJ

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Frequency - Transition :

470MHz

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

500mA

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

2W

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PDSO-G4

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

Number of Terminations :

4

Voltage - Collector Emitter Breakdown (Max) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 300mA 5V

Peak Reflow Temperature (Cel) :

260