BFN27E6327HTSA1
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- Mfr.Part #
- BFN27E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.2A SOT23
- Stock
- 3,998
- In Stock ：
- 3,998
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Base Part Number :
- BFN27
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Current Rating :
- -200mA
- Collector Emitter Saturation Voltage :
- 500mV
- Mount :
- Surface Mount
- Length :
- 2.9mm
- Contact Plating :
- Tin
- Height :
- 900μm
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 360mW
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 300V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 360mW
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Voltage - Rated DC :
- -300V
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Collector Emitter Voltage (VCEO) :
- 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 300V
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- hFE Min :
- 30
- Number of Terminations :
- 3
- Halogen Free :
- Not Halogen Free
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Position :
- Dual
- Datasheets
- BFN27E6327HTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN27E6327HTSA1 Overview
DC current gain in this device equals 30 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 200mA volts.
BFN27E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 100MHz
BFN27E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN27E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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