BFN27E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

1.3mm

Transition Frequency :

100MHz

Radiation Hardening :

No

Transistor Type :

PNP

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

BFN27

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

10V

Polarity/Channel Type :

PNP

Element Configuration :

Single

Pbfree Code :

yes

Max Power Dissipation :

360mW

Number of Elements :

1

Halogen Free :

Not Halogen Free

Published :

2007

Max Collector Current :

200mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Contact Plating :

Tin

Height :

900μm

Number of Terminations :

3

Power Dissipation :

360mW

Max Breakdown Voltage :

300V

Voltage - Rated DC :

-300V

Mounting Type :

Surface Mount

Length :

2.9mm

hFE Min :

30

ECCN Code :

EAR99

Current Rating :

-200mA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

300V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Frequency :

100MHz

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

300V

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA 10V