BFN27E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Voltage (VCEO) :

10V

Height :

900μm

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Width :

1.3mm

hFE Min :

30

Published :

2007

Max Breakdown Voltage :

300V

Number of Elements :

1

Frequency :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Transition Frequency :

100MHz

Max Power Dissipation :

360mW

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Base Part Number :

BFN27

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

300V

Pbfree Code :

yes

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Contact Plating :

Tin

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Max Collector Current :

200mA

Radiation Hardening :

No

Transistor Element Material :

SILICON

Halogen Free :

Not Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA 10V

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation :

360mW

ECCN Code :

EAR99

Terminal Form :

Gull wing

Current Rating :

-200mA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Length :

2.9mm

Voltage - Rated DC :

-300V

Collector Emitter Breakdown Voltage :

300V