BFN26E6327HTSA1
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- Mfr.Part #
- BFN26E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT23
- Stock
- 5,775
- In Stock ：
- 5,775
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 360mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 30
- Collector Emitter Voltage (VCEO) :
- 10V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Height :
- 900μm
- Element Configuration :
- Single
- Max Collector Current :
- 200mA
- Frequency :
- 70MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Transition Frequency :
- 70MHz
- Collector Base Voltage (VCBO) :
- 300V
- Transistor Type :
- NPN
- Base Part Number :
- BFN26
- Max Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 360mW
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 300V
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Radiation Hardening :
- No
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Datasheets
- BFN26E6327HTSA1
BFN26E6327HTSA1 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN26E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 70MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BFN26E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 70MHz
BFN26E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN26E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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