BFN26E6433HTMA1
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- Mfr.Part #
- BFN26E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT23
- Stock
- 14,744
- In Stock ：
- 14,744
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 360mW
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Frequency :
- 70MHz
- Max Collector Current :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage :
- 300V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 300V
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 70MHz
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Configuration :
- Single
- Transistor Type :
- NPN
- Power Dissipation :
- 360mW
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 200mA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Collector Base Voltage (VCBO) :
- 300V
- Base Part Number :
- BFN26
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Datasheets
- BFN26E6433HTMA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN26E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN26E6433HTMA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
BFN26E6433HTMA1 Applications
There are a lot of Infineon Technologies
BFN26E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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