BFN26E6433HTMA1
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- Mfr.Part #
- BFN26E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT23
- Stock
- 14,744
- In Stock ：
- 14,744
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2007
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BFN26
- Collector Emitter Breakdown Voltage :
- 300V
- Frequency :
- 70MHz
- Mount :
- Surface Mount
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 70MHz
- Current - Collector (Ic) (Max) :
- 200mA
- Collector Base Voltage (VCBO) :
- 300V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 360mW
- Max Power Dissipation :
- 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Max Collector Current :
- 200mA
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Datasheets
- BFN26E6433HTMA1
BFN26E6433HTMA1 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN26E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN26E6433HTMA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
BFN26E6433HTMA1 Applications
There are a lot of Infineon Technologies
BFN26E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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