BF821,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

60MHz

Mount :

Surface Mount

Number of Pins :

3

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

300V

Max Breakdown Voltage :

300V

Power Dissipation :

250mW

Operating Temperature :

150°C TJ

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

2009

Series :

Automotive, AEC-Q101

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

300V

Base Part Number :

BF821

Vce Saturation (Max) @ Ib, Ic :

800mV @ 5mA, 30mA

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

VCEsat-Max :

0.8 V

JESD-609 Code :

e3

Max Collector Current :

50mA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Element Configuration :

Single

Collector Base Voltage (VCBO) :

300V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Frequency :

60MHz

Transition Frequency :

60MHz

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

10nA ICBO