BF820W,115
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- Mfr.Part #
- BF820W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.05A SOT323
- Stock
- 644
- In Stock ：
- 644
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 60MHz
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 50mA
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- VCEsat-Max :
- 0.6 V
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 60MHz
- Base Part Number :
- BF820
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 60MHz
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 300V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 300V
- Max Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BF820W,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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