BF820W,115
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- Mfr.Part #
- BF820W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.05A SOT323
- Stock
- 644
- In Stock ：
- 644
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 300V
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Base Part Number :
- BF820
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Collector Current :
- 50mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 60MHz
- VCEsat-Max :
- 0.6 V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Package / Case :
- SC-70, SOT-323
- Published :
- 2009
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 60MHz
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Transition Frequency :
- 60MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BF820W,115
BF820W,115 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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