BF820W,115
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- Mfr.Part #
- BF820W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 50MA SOT323
- Stock
- 644
- In Stock ：
- 644
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Transition Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 60MHz
- VCEsat-Max :
- 0.6 V
- Collector Base Voltage (VCBO) :
- 300V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Mount :
- Surface Mount
- Base Part Number :
- BF820
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 200mW
- Max Collector Current :
- 50mA
- Max Breakdown Voltage :
- 300V
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Frequency :
- 60MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BF820W,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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