BF820W,115
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- Mfr.Part #
- BF820W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 50MA SOT323
- Stock
- 644
- In Stock ：
- 644
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 300V
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Base Part Number :
- BF820
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- VCEsat-Max :
- 0.6 V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Pin Count :
- 3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 50mA
- Gain Bandwidth Product :
- 60MHz
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Published :
- 2009
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 300V
- Datasheets
- BF820W,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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