BF820W,115
- Mfr.Part #
- BF820W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 50MA SOT323
- Stock
- 644
- In Stock :
- 644
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Frequency :
- 60MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Pin Count :
- 3
- VCEsat-Max :
- 0.6 V
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 60MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 300V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BF820
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Package / Case :
- SC-70, SOT-323
- Max Collector Current :
- 50mA
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Transition Frequency :
- 60MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 300V
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Power Dissipation :
- 200mW
- Datasheets
- BF820W,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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