BF820,235
- Mfr.Part #
- BF820,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BF820 - SMALL SIGNAL BI
- Stock
- 38,600
- In Stock :
- 38,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pin Count :
- 3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Max Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Frequency :
- 60MHz
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Max Collector Current :
- 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 300V
- Base Part Number :
- BF820
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 60MHz
- Published :
- 2009
- Element Configuration :
- Single
- VCEsat-Max :
- 0.6 V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 60MHz
- Datasheets
- BF820,235

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF820,235 Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 30mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 50mA volts.
BF820,235 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820,235 Applications
There are a lot of Nexperia USA Inc.
BF820,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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