BF820,235
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- Mfr.Part #
- BF820,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BF820 - SMALL SIGNAL BI
- Stock
- 38,600
- In Stock ：
- 38,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Number of Terminations :
- 3
- Max Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 300V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 60MHz
- Transition Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 60MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BF820
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Terminal Position :
- Dual
- VCEsat-Max :
- 0.6 V
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 50mA
- Pin Count :
- 3
- Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BF820,235
BF820,235 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF820,235 Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 30mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 50mA volts.
BF820,235 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820,235 Applications
There are a lot of Nexperia USA Inc.
BF820,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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