BF1109WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Element Material :

SILICON

Transistor Type :

N-Channel Dual Gate

ECCN Code :

EAR99

Voltage - Test :

9V

DS Breakdown Voltage-Min :

11V

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Current Rating (Amps) :

30mA

Published :

1997

JESD-609 Code :

e3

Surface Mount :

yes

Operating Temperature (Max) :

150°C

Feedback Cap-Max (Crss) :

0.04 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Source Url Status Check Date :

2013-06-14 00:00:00

Pin Count :

4

Noise Figure :

1.5dB

Terminal Form :

Gull wing

Case Connection :

SOURCE

Base Part Number :

BF1109

Frequency :

800MHz

Configuration :

Single

Packaging :

Tape and Reel (TR)

Additional Feature :

LOW NOISE

Drain Current-Max (Abs) (ID) :

0.03A

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Gain :

20dB

Reach Compliance Code :

Unknown

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Package / Case :

SC-82A, SOT-343

Qualification Status :

Not Qualified

Number of Elements :

1

Voltage - Rated :

11V