BF1100,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Elements :

2

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.03A

Voltage - Test :

9V

Current - Test :

10mA

Pin Count :

4

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Voltage - Rated :

14V

Peak Reflow Temperature (Cel) :

260

Case Connection :

SOURCE

Transistor Type :

N-Channel Dual Gate

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-253-4, TO-253AA

Additional Feature :

LOW NOISE

Base Part Number :

BF1100

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

14V

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

0.035 pF

Surface Mount :

yes

Frequency :

800MHz

Current Rating (Amps) :

30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

COMPLEX

Number of Terminations :

4

Noise Figure :

2dB

Operating Temperature (Max) :

150°C

Published :

1995

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant