BF1100,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Published :

1995

Transistor Type :

N-Channel Dual Gate

Feedback Cap-Max (Crss) :

0.035 pF

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-253-4, TO-253AA

Number of Elements :

2

Surface Mount :

yes

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Current - Test :

10mA

Drain Current-Max (Abs) (ID) :

0.03A

Qualification Status :

Not Qualified

Noise Figure :

2dB

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Voltage - Test :

9V

Transistor Element Material :

SILICON

Voltage - Rated :

14V

Number of Terminations :

4

Additional Feature :

LOW NOISE

Packaging :

Tape and Reel (TR)

Frequency :

800MHz

Current Rating (Amps) :

30mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Base Part Number :

BF1100

Configuration :

COMPLEX

Operating Temperature (Max) :

150°C

Transistor Application :

AMPLIFIER

HTS Code :

8541.21.00.75

DS Breakdown Voltage-Min :

14V

Peak Reflow Temperature (Cel) :

260

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)