BF1100,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

9V

Feedback Cap-Max (Crss) :

0.035 pF

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.03A

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

14V

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOW NOISE

Transistor Type :

N-Channel Dual Gate

Surface Mount :

yes

Base Part Number :

BF1100

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Voltage - Rated :

14V

Configuration :

COMPLEX

JESD-609 Code :

e3

Package / Case :

TO-253-4, TO-253AA

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Current Rating (Amps) :

30mA

Published :

1995

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Noise Figure :

2dB

Frequency :

800MHz

JESD-30 Code :

R-PDSO-G4

Transistor Application :

AMPLIFIER

Pin Count :

4

Transistor Element Material :

SILICON

Case Connection :

SOURCE

Operating Temperature (Max) :

150°C

Number of Terminations :

4

Current - Test :

10mA

Time@Peak Reflow Temperature-Max (s) :

40