BF1100,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Voltage - Rated :

14V

Base Part Number :

BF1100

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1995

Peak Reflow Temperature (Cel) :

260

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Configuration :

COMPLEX

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Noise Figure :

2dB

Qualification Status :

Not Qualified

Feedback Cap-Max (Crss) :

0.035 pF

Drain Current-Max (Abs) (ID) :

0.03A

Transistor Type :

N-Channel Dual Gate

Reach Compliance Code :

Unknown

Package / Case :

TO-253-4, TO-253AA

Pin Count :

4

HTS Code :

8541.21.00.75

Number of Elements :

2

Additional Feature :

LOW NOISE

Voltage - Test :

9V

JESD-30 Code :

R-PDSO-G4

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

DS Breakdown Voltage-Min :

14V

Current Rating (Amps) :

30mA

Number of Terminations :

4

Current - Test :

10mA

JESD-609 Code :

e3

Frequency :

800MHz