BF1100R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

ECCN Code :

EAR99

Transistor Type :

N-Channel Dual Gate

Base Part Number :

BF1100

Transistor Element Material :

SILICON

Surface Mount :

yes

Terminal Form :

Gull wing

Source Url Status Check Date :

2013-06-14 00:00:00

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

COMPLEX

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

14V

Frequency :

800MHz

Additional Feature :

LOW NOISE

Published :

1995

Voltage - Rated :

14V

Drain Current-Max (Abs) (ID) :

0.03A

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Current - Test :

10mA

Number of Terminations :

4

Current Rating (Amps) :

30mA

Voltage - Test :

9V

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Noise Figure :

2dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

0.035 pF

JESD-30 Code :

R-PDSO-G4

Package / Case :

SOT-143R

Qualification Status :

Not Qualified

Pin Count :

4