BF1100R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Form :

Gull wing

Case Connection :

SOURCE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

14V

HTS Code :

8541.21.00.75

Pin Count :

4

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

ECCN Code :

EAR99

Published :

1995

Number of Terminations :

4

Current Rating (Amps) :

30mA

Terminal Finish :

Matte Tin (Sn)

Source Url Status Check Date :

2013-06-14 00:00:00

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated :

14V

Additional Feature :

LOW NOISE

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Frequency :

800MHz

Operating Temperature (Max) :

150°C

Current - Test :

10mA

Base Part Number :

BF1100

Package / Case :

SOT-143R

Voltage - Test :

9V

Feedback Cap-Max (Crss) :

0.035 pF

Drain Current-Max (Abs) (ID) :

0.03A

Transistor Element Material :

SILICON

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Transistor Type :

N-Channel Dual Gate

Configuration :

COMPLEX

Noise Figure :

2dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR