BF1100R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.03A

Package / Case :

SOT-143R

Current - Test :

10mA

ECCN Code :

EAR99

Current Rating (Amps) :

30mA

Voltage - Rated :

14V

Transistor Type :

N-Channel Dual Gate

Voltage - Test :

9V

JESD-609 Code :

e3

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Transistor Application :

AMPLIFIER

Base Part Number :

BF1100

Number of Elements :

2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Configuration :

COMPLEX

Feedback Cap-Max (Crss) :

0.035 pF

Frequency :

800MHz

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

14V

Operating Temperature (Max) :

150°C

Noise Figure :

2dB

Number of Terminations :

4

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Additional Feature :

LOW NOISE

Surface Mount :

yes

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1995

Source Url Status Check Date :

2013-06-14 00:00:00

Case Connection :

SOURCE

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)