BF1100R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating (Amps) :

30mA

Number of Elements :

2

JESD-609 Code :

e3

Current - Test :

10mA

Base Part Number :

BF1100

Operating Temperature (Max) :

150°C

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Configuration :

COMPLEX

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1995

Surface Mount :

yes

Transistor Type :

N-Channel Dual Gate

Additional Feature :

LOW NOISE

Source Url Status Check Date :

2013-06-14 00:00:00

Terminal Form :

Gull wing

Voltage - Rated :

14V

Voltage - Test :

9V

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Noise Figure :

2dB

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

0.035 pF

Package / Case :

SOT-143R

Drain Current-Max (Abs) (ID) :

0.03A

DS Breakdown Voltage-Min :

14V

Number of Terminations :

4

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G4

Frequency :

800MHz

Case Connection :

SOURCE

Qualification Status :

Not Qualified