BF1105WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

N-Channel Dual Gate

DS Breakdown Voltage-Min :

7V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Frequency :

800MHz

Operating Temperature (Max) :

150°C

Terminal Finish :

Tin (Sn)

Feedback Cap-Max (Crss) :

0.04 pF

Transistor Application :

AMPLIFIER

Package / Case :

SC-82A, SOT-343

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Surface Mount :

yes

Base Part Number :

BF1105

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

Configuration :

Single

JESD-609 Code :

e3

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.03A

Peak Reflow Temperature (Cel) :

260

Published :

1997

Current Rating (Amps) :

30mA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Gain :

20dB

HTS Code :

8541.21.00.75

Noise Figure :

1.7dB

Pin Count :

4

Voltage - Test :

5V

Voltage - Rated :

7V