BF1105WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

N-Channel Dual Gate

Drain Current-Max (Abs) (ID) :

0.03A

Qualification Status :

Not Qualified

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Pin Count :

4

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

0.04 pF

DS Breakdown Voltage-Min :

7V

Number of Elements :

1

Current Rating (Amps) :

30mA

Base Part Number :

BF1105

Noise Figure :

1.7dB

Terminal Finish :

Tin (Sn)

HTS Code :

8541.21.00.75

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Frequency :

800MHz

Published :

1997

JESD-609 Code :

e3

Number of Terminations :

4

Voltage - Rated :

7V

Gain :

20dB

Package / Case :

SC-82A, SOT-343

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature (Max) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

5V

Configuration :

Single

Terminal Form :

Gull wing

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant