BF1105WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated :

7V

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Gain :

20dB

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.03A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

BF1105

Current Rating (Amps) :

30mA

Terminal Finish :

Tin (Sn)

Frequency :

800MHz

HTS Code :

8541.21.00.75

Operating Temperature (Max) :

150°C

Reach Compliance Code :

Unknown

Package / Case :

SC-82A, SOT-343

Transistor Element Material :

SILICON

Pin Count :

4

DS Breakdown Voltage-Min :

7V

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

0.04 pF

JESD-30 Code :

R-PDSO-G4

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Configuration :

Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Noise Figure :

1.7dB

Transistor Type :

N-Channel Dual Gate

Number of Terminations :

4

ECCN Code :

EAR99

Terminal Form :

Gull wing

Published :

1997

Voltage - Test :

5V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3