BF1105WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

0.03A

Feedback Cap-Max (Crss) :

0.04 pF

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

7V

Peak Reflow Temperature (Cel) :

260

Transistor Type :

N-Channel Dual Gate

Current Rating (Amps) :

30mA

Package / Case :

SC-82A, SOT-343

Published :

1997

Qualification Status :

Not Qualified

Number of Elements :

1

Gain :

20dB

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Voltage - Test :

5V

Number of Terminations :

4

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

BF1105

Configuration :

Single

Transistor Element Material :

SILICON

Frequency :

800MHz

Operating Temperature (Max) :

150°C

Pin Count :

4

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Voltage - Rated :

7V

Noise Figure :

1.7dB

Terminal Finish :

Tin (Sn)

HTS Code :

8541.21.00.75