BF1101WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Form :

Gull wing

Package / Case :

SC-82A, SOT-343

Transistor Element Material :

SILICON

Transistor Type :

N-Channel Dual Gate

Voltage - Rated :

7V

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW NOISE

Surface Mount :

yes

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Pin Count :

4

Qualification Status :

Not Qualified

Configuration :

Single

Noise Figure :

1.7dB

Base Part Number :

BF1101

Current - Test :

12mA

Voltage - Test :

5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

260

Frequency :

800MHz

JESD-30 Code :

R-PDSO-G4

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

7V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

0.03A

Feedback Cap-Max (Crss) :

0.035 pF

Current Rating (Amps) :

30mA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1