BF1100WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Feedback Cap-Max (Crss) :

0.035 pF

Current - Test :

10mA

Current Rating (Amps) :

30mA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-82A, SOT-343

Voltage - Rated :

14V

Reach Compliance Code :

Unknown

Configuration :

COMPLEX

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Published :

1995

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.03A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Noise Figure :

2dB

Base Part Number :

BF1100

ECCN Code :

EAR99

Additional Feature :

LOW NOISE

DS Breakdown Voltage-Min :

14V

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Transistor Type :

N-Channel Dual Gate

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

Voltage - Test :

9V

Number of Terminations :

4

Frequency :

800MHz

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260