BF1109R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Published :

1997

Package / Case :

SOT-143R

Terminal Form :

Gull wing

JESD-609 Code :

e3

Pin Count :

4

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G4

Current Rating (Amps) :

30mA

Noise Figure :

1.5dB

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Additional Feature :

LOW NOISE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gain :

20dB

Reach Compliance Code :

Unknown

Terminal Finish :

Matte Tin (Sn)

Operating Temperature (Max) :

150°C

Drain Current-Max (Abs) (ID) :

0.03A

Transistor Application :

AMPLIFIER

Number of Elements :

1

DS Breakdown Voltage-Min :

11V

Voltage - Test :

9V

Packaging :

Tape and Reel (TR)

Frequency :

800MHz

Source Url Status Check Date :

2013-06-14 00:00:00

Transistor Type :

N-Channel Dual Gate

Feedback Cap-Max (Crss) :

0.04 pF

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

SOURCE

Base Part Number :

BF1109

Voltage - Rated :

11V

Qualification Status :

Not Qualified