BDX34BG

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Mfr.Part #
BDX34BG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 10A TO220
Stock
1,096
In Stock :
1,096

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
10.53mm
Element Configuration :
Single
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Number of Terminations :
3
Mounting Type :
Through Hole
Width :
4.83mm
Max Collector Current :
10A
Terminal Finish :
Tin (Sn)
Pin Count :
3
Collector Base Voltage (VCBO) :
80V
Current Rating :
-10A
Number of Pins :
3
Published :
2000
Package / Case :
TO-220-3
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
2.5V
JEDEC-95 Code :
TO-220AB
Transition Frequency :
3MHz
Operating Temperature :
-65°C~150°C TJ
Packaging :
Tube
Factory Lead Time :
2 Weeks
Weight :
6.000006g
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Max Power Dissipation :
70W
Lead Free :
Lead Free
Base Part Number :
BDX34
Case Connection :
COLLECTOR
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
500μA
Voltage - Rated DC :
-80V
Polarity :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
80V
Surface Mount :
No
Transistor Type :
PNP - Darlington
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Emitter Voltage (VCEO) :
80V
Height :
15.75mm
JESD-609 Code :
e3
ECCN Code :
EAR99
hFE Min :
750
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Power Dissipation :
70W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BDX34BG
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX34BG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BDX34, BDX34BG pinout, BDX34BG datasheet PDF, BDX34BG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX34BG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX34BG


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX34BG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 10A volts.

BDX34BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 3MHz


BDX34BG Applications


There are a lot of ON Semiconductor
BDX34BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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