BDX34B
- Mfr.Part #
- BDX34B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 10A TO220-3
- Stock
- 507
- In Stock :
- 507
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.53mm
- Number of Elements :
- 1
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Max Power Dissipation :
- 70W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Published :
- 2000
- hFE Min :
- 750
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BDX34
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Transistor Type :
- PNP - Darlington
- Collector Emitter Saturation Voltage :
- 2.5V
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 15.75mm
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -80V
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 70W
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Width :
- 4.83mm
- Weight :
- 6.000006g
- Current - Collector Cutoff (Max) :
- 500μA
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Current Rating :
- -10A
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Max Collector Current :
- 10A
- Datasheets
- BDX34B

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX34BG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
BDX34BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 3MHz
BDX34BG Applications
There are a lot of ON Semiconductor
BDX34BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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