BDW54D-S

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Mfr.Part #
BDW54D-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 120V 4A TO220
Stock
31,895
In Stock :
31,895

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
1993
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2W
Mount :
Through Hole
Polarity :
PNP
Transistor Element Material :
SILICON
Terminal Finish :
TIN SILVER COPPER
Power - Max :
2W
Collector Emitter Voltage (VCEO) :
120V
Package / Case :
TO-220-3
Operating Temperature :
-65°C~150°C TJ
Collector Base Voltage (VCBO) :
120V
Number of Elements :
1
ECCN Code :
EAR99
Base Part Number :
BDW54
Transistor Application :
SWITCHING
Element Configuration :
Single
Pbfree Code :
yes
Pin Count :
3
Radiation Hardening :
No
Transistor Type :
PNP - Darlington
Collector Emitter Saturation Voltage :
2.5V
JEDEC-95 Code :
TO-220AB
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Breakdown Voltage :
120V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Max Collector Current :
4A
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e1
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
4V @ 40mA, 4A
Number of Terminations :
3
Packaging :
Tube
Datasheets
BDW54D-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW54D-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BDW54, Number of Terminations:3, BDW54D-S pinout, BDW54D-S datasheet PDF, BDW54D-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW54D-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW54D-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW54D-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 4V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 4A volts can be achieved.

BDW54D-S Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V


BDW54D-S Applications


There are a lot of Bourns Inc.
BDW54D-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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