BDW53-S

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Mfr.Part #
BDW53-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 45V 4A TO220
Stock
19,476
In Stock :
19,476

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e1
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Pin Count :
3
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
45V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Max Collector Current :
4A
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-65°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
2.5V
Number of Elements :
1
Radiation Hardening :
No
Published :
1993
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
2W
Polarity :
NPN
Terminal Finish :
TIN SILVER COPPER
Transistor Element Material :
SILICON
Element Configuration :
Single
Current - Collector Cutoff (Max) :
500μA
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Vce Saturation (Max) @ Ib, Ic :
4V @ 40mA, 4A
Collector Base Voltage (VCBO) :
45V
Number of Terminations :
3
Package / Case :
TO-220-3
Base Part Number :
BDW53
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
45V
Power - Max :
2W
Packaging :
Tube
Datasheets
BDW53-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW53-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Base Part Number:BDW53, BDW53-S pinout, BDW53-S datasheet PDF, BDW53-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW53-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW53-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW53-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 4V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 4A volts can be achieved.

BDW53-S Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V


BDW53-S Applications


There are a lot of Bourns Inc.
BDW53-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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