BDW53D-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

120V

Published :

1993

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

120V

Transistor Type :

NPN - Darlington

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

2.5V

Pin Count :

3

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Base Part Number :

BDW53

Polarity :

NPN

Number of Elements :

1

Radiation Hardening :

No

Packaging :

Tube

JESD-609 Code :

e1

Power - Max :

2W

ECCN Code :

EAR99

Max Collector Current :

4A

Vce Saturation (Max) @ Ib, Ic :

4V @ 40mA, 4A

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Power Dissipation :

40W

Current - Collector Cutoff (Max) :

500μA

Mount :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Breakdown Voltage :

120V

Transistor Element Material :

SILICON

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Case Connection :

COLLECTOR