BDW53B-S
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- Mfr.Part #
- BDW53B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO220
- Stock
- 1,418
- In Stock ：
- 1,418
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Published :
- 1993
- Base Part Number :
- BDW53
- Terminal Finish :
- TIN SILVER COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 500μA
- Power - Max :
- 2W
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 40mA, 4A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 2W
- Datasheets
- BDW53B-S
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW53B-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 40mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 4A volts.
BDW53B-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V
BDW53B-S Applications
There are a lot of Bourns Inc.
BDW53B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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