BD442STU
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- Mfr.Part #
- BD442STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO126-3
- Stock
- 5,813
- In Stock ：
- 5,813
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Power Dissipation :
- 36W
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -80V
- Weight :
- 761mg
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- Mount :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Tube
- Base Part Number :
- BD442
- Collector Emitter Saturation Voltage :
- -800mV
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- Frequency :
- 3MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 36W
- JESD-609 Code :
- e3
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- hFE Min :
- 15
- Collector Base Voltage (VCBO) :
- -80V
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Current Rating :
- -4A
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Datasheets
- BD442STU
BD442STU Documents
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD442STU Overview
This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -800mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 4A volts.
BD442STU Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD442STU Applications
There are a lot of ON Semiconductor
BD442STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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