BD442STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 500mA 1V

Transistor Type :

PNP

Mount :

Through Hole

Base Part Number :

BD442

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

-5V

Packaging :

Tube

Collector Emitter Breakdown Voltage :

80V

Voltage - Rated DC :

-80V

hFE Min :

15

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

-80V

Power Dissipation :

36W

Max Power Dissipation :

36W

Collector Emitter Saturation Voltage :

-800mV

Current - Collector Cutoff (Max) :

100μA

Gain Bandwidth Product :

3MHz

Element Configuration :

Single

Weight :

761mg

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Collector Emitter Voltage (VCEO) :

80V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Collector Current :

4A

Frequency :

3MHz

Radiation Hardening :

No

Transition Frequency :

3MHz

Contact Plating :

Tin

Package / Case :

TO-225AA, TO-126-3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Current Rating :

-4A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Pins :

3