BD442STU

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Mfr.Part #
BD442STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 4A TO126-3
Stock
5,813
In Stock :
5,813

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power Dissipation :
36W
Base Part Number :
BD442
Number of Elements :
1
Max Collector Current :
4A
Operating Temperature :
150°C TJ
Contact Plating :
Tin
Lead Free :
Lead Free
Pbfree Code :
yes
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Frequency :
3MHz
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Emitter Base Voltage (VEBO) :
-5V
Packaging :
Tube
Collector Base Voltage (VCBO) :
-80V
Collector Emitter Voltage (VCEO) :
80V
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 1V
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
80V
Transistor Element Material :
SILICON
Factory Lead Time :
2 Weeks
Mount :
Through Hole
Current Rating :
-4A
JESD-609 Code :
e3
Number of Terminations :
3
Max Power Dissipation :
36W
Gain Bandwidth Product :
3MHz
Radiation Hardening :
No
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100μA
Voltage - Rated DC :
-80V
hFE Min :
15
Weight :
761mg
Collector Emitter Saturation Voltage :
-800mV
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Transition Frequency :
3MHz
Package / Case :
TO-225AA, TO-126-3
Introducing Transistors - Bipolar (BJT) - Single onsemi BD442STU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD442, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, BD442STU pinout, BD442STU datasheet PDF, BD442STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD442STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD442STU


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD442STU Overview


This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -800mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 4A volts.

BD442STU Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD442STU Applications


There are a lot of ON Semiconductor
BD442STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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