BD441G
- Mfr.Part #
- BD441G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO126
- Stock
- 3,224
- In Stock :
- 3,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Base Part Number :
- BD441
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 800mV
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 36W
- Transistor Type :
- NPN
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Published :
- 2000
- Current Rating :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 36W
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- hFE Min :
- 15
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- BD441G
BD441G Documents
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD441G Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD441G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD441G Applications
There are a lot of ON Semiconductor
BD441G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BD440S | onsemi | 1 | TRANS PNP 60V 4A TO126-3 |
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| BD442S | onsemi | 33,027 | TRANS PNP 80V 4A TO126-3 |
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| BD442STU | onsemi | 5,813 | TRANS PNP 80V 4A TO126-3 |
| BD442STU-ON | onsemi | 3,829 | TRANS PNP 80V 4A TO126-3 |
















