BD441G

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Mfr.Part #
BD441G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 4A TO126
Stock
3,224
In Stock :
3,224

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
BD441
Max Power Dissipation :
36W
Frequency :
3MHz
REACH SVHC :
No SVHC
Package / Case :
TO-225AA, TO-126-3
Peak Reflow Temperature (Cel) :
260
Current Rating :
4A
Current - Collector Cutoff (Max) :
100μA ICBO
Power Dissipation :
36W
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Collector Emitter Voltage (VCEO) :
80V
Radiation Hardening :
No
Gain Bandwidth Product :
3MHz
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
80V
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
800mV
Max Collector Current :
4A
Element Configuration :
Single
Published :
2000
Surface Mount :
No
Number of Elements :
1
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 1V
Polarity/Channel Type :
NPN
Number of Pins :
3
Transistor Type :
NPN
Transition Frequency :
3MHz
Operating Temperature :
-55°C~150°C TJ
Packaging :
Bulk
Voltage - Rated DC :
80V
Vce Saturation (Max) @ Ib, Ic :
800mV @ 300mA, 3A
ECCN Code :
EAR99
hFE Min :
15
Introducing Transistors - Bipolar (BJT) - Single onsemi BD441G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD441, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, BD441G pinout, BD441G datasheet PDF, BD441G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD441G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD441G


NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD441G Overview


In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD441G Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz


BD441G Applications


There are a lot of ON Semiconductor
BD441G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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