BD442S
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- Mfr.Part #
- BD442S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO126-3
- Stock
- 33,027
- In Stock ：
- 33,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -800mV
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -80V
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 3MHz
- Current Rating :
- -4A
- Element Configuration :
- Single
- Max Collector Current :
- 4A
- Base Part Number :
- BD442
- Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- PNP
- Power Dissipation :
- 36W
- Voltage - Rated DC :
- -80V
- hFE Min :
- 15
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Weight :
- 761mg
- Max Power Dissipation :
- 36W
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Datasheets
- BD442S
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD442S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD442S Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD442S Applications
There are a lot of ON Semiconductor
BD442S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| BD440 | onsemi | 2,315 | TRANS PNP 60V 4A TO126 |
| BD440G | onsemi | 41,684 | TRANS PNP 60V 4A TO126 |
| BD440S | onsemi | 1 | TRANS PNP 60V 4A TO126-3 |
| BD441 | onsemi | 29,299 | TRANS NPN 80V 4A TO126 |
| BD441 | onsemi | 1,693 | TRANS NPN 80V 4A SOT32 |
| BD441G | onsemi | 3,224 | TRANS NPN 80V 4A TO126 |
| BD441STU | onsemi | 14,923 | TRANS NPN 80V 4A TO126-3 |
| BD441STU | onsemi | 14,923 | TRANS NPN 80V 4A TO126-3 |
| BD442 | onsemi | 18,905 | TRANS PNP 80V 4A TO126 |
| BD442 | onsemi | 18,905 | TRANS PNP 80V 4A SOT32 |
| BD442G | onsemi | 411 | TRANS PNP 80V 4A TO126 |
| BD442STU | onsemi | 5,813 | TRANS PNP 80V 4A TO126-3 |
| BD442STU | onsemi | 5,813 | TRANS PNP 80V 4A TO126-3 |
| BD442STU-ON | onsemi | 3,829 | TRANS PNP 80V 4A TO126-3 |
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